E4D20120D Key Features
- 4th generation SiC merged PIN schottky technology
- Zero reverse recovery current
- High-frequency operation
- Temperature-independent switching behavior
- AEC-Q101 qualified and PPAP capable
- Humidity resistant
E4D20120D is Silicon Carbide Power MOSFET manufactured by Wolfspeed.
| Manufacturer | Part Number | Description |
|---|---|---|
Cree |
E4D20120A | Silicon Carbide Schottky Diode |
Cree |
E4D20120G | Silicon Carbide Schottky Diode |
E4D20120D 1200 V, 20 A Silicon Carbide Schottky Diode.