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E4D20120A - 20A Silicon Carbide Schottky Diode

General Description

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities.

Key Features

  • Low Forward Voltage (VF) Drop with Positive Temperature Coefficient.
  • Zero Reverse Recovery Current / Forward Recovery Voltage.
  • Temperature-Independent Switching Behavior.
  • Automotive Qualified (AEC Q101) and PPAP Capable.

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Datasheet Details

Part number E4D20120A
Manufacturer Wolfspeed
File Size 1.26 MB
Description 20A Silicon Carbide Schottky Diode
Datasheet download datasheet E4D20120A Datasheet

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E4D20120A E-Series Automotive 4th Generation 1200 V, 20 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various application demands, without concern of thermal runaway. In combination with the reduced cooling requirements and improved thermal performance of SiC products, SiC diodes are able to provide lower overall system costs in a variety of diverse applications.