| Part Number | E4D20120A Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching.
* Low Forward Voltage (VF) Drop with Positive Temperature Coefficient * Zero Reverse Recovery Current / Forward Recovery Voltage * Temperature-Independent Switching Behavior * Automotive Qualified (AEC Q101) and PPAP Capable Applications * Industrial Switched Mode Power Supplies * Uninterruptible &. |
E4D20120A Datasheet and Specifications PDF
The E4D20120A is a 20A Silicon Carbide Schottky Diode.
Key Specifications
| Package | TO-220-2 |
|---|---|
| Height | 19.431 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | E4D20120A Datasheet |
|---|---|
| Description | Silicon Carbide Schottky Diode |
| Manufacturer | Cree |
| Overview |
E4D20120A
Silicon Carbide Schottky Diode E-Series Automotive
Features
Package
• 4th Generation SiC Merged PIN Schottky Technology • Zero Reverse Recovery Current • High-Frequency Oper.
Package
* 4th Generation SiC Merged PIN Schottky Technology * Zero Reverse Recovery Current * High-Frequency Operation * Temperature-Independent Switching Behavior * AEC-Q101 Qualified and PPAP Capable * Humidity Resistant Benefits TO-220-2 * Replace Bipolar with Unipolar Rectifiers * E. |