E4D20120G Overview
Key Features
- 4th generation SiC merged PIN Schottky technology
- Zero reverse recovery current
- High-frequency operation
- Temperature-independent switching behavior
- AEC-Q101 qualified and PPAP capable
| Part | E4D20120G |
|---|---|
| Description | 20A Silicon Carbide Schottky Diode |
| Category | Diode |
| Manufacturer | Wolfspeed |
| Size | 726.84 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| E4D20120G | Cree | Silicon Carbide Schottky Diode |
| E4D20120A | Cree | Silicon Carbide Schottky Diode |