E4D20120G Key Features
- 4th generation SiC merged PIN Schottky technology
- Zero reverse recovery current
- High-frequency operation
- Temperature-independent switching behavior
- AEC-Q101 qualified and PPAP capable
- Humidity resistant
- Part: E4D20120G
- Manufacturer: Wolfspeed
- Size: 726.84 KB
Other E4D20120G Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Cree |
E4D20120G | Silicon Carbide Schottky Diode |
|
Cree |
E4D20120A | Silicon Carbide Schottky Diode |
E4D20120G Description
E4D20120G 1200 V, 20 A Silicon Carbide Schottky Diode.
E4D20120G Applications
- Boost diodes in PFC or DC/DC stages
- Free wheeling diodes in inverter stages