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E4D20120G - 20A Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • 4th generation SiC merged PIN Schottky technology.
  • Zero reverse recovery current.
  • High-frequency operation.
  • Temperature-independent switching behavior.
  • AEC-Q101 qualified and PPAP capable.
  • Humidity resistant TO-263-2 Package Types: TO-263-2 PN: E4D20120G Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, pro.

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Datasheet Details

Part number E4D20120G
Manufacturer Wolfspeed
File Size 726.84 KB
Description 20A Silicon Carbide Schottky Diode
Datasheet download datasheet E4D20120G Datasheet
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E4D20120G 1200 V, 20 A Silicon Carbide Schottky Diode Features • 4th generation SiC merged PIN Schottky technology • Zero reverse recovery current • High-frequency operation • Temperature-independent switching behavior • AEC-Q101 qualified and PPAP capable • Humidity resistant TO-263-2 Package Types: TO-263-2 PN: E4D20120G Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfspeed, Inc. During this transition period, products received may be marked with either the Cree name and/or logo or the Wolfspeed name and/or logo.
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