E4D20120G Overview
E4D20120G 1200 V, 20 A Silicon Carbide Schottky Diode.
E4D20120G Key Features
- 4th generation SiC merged PIN Schottky technology
- Zero reverse recovery current
- High-frequency operation
- Temperature-independent switching behavior
- AEC-Q101 qualified and PPAP capable
- Humidity resistant
E4D20120G Applications
- Boost diodes in PFC or DC/DC stages
- Free wheeling diodes in inverter stages
