| Part Number | E4D20120G Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
E4D20120G
1200 V, 20 A Silicon Carbide Schottky Diode
Features
• 4th generation SiC merged PIN Schottky technology • Zero reverse recovery current • High-frequency operation • Temperature-independen.
* 4th generation SiC merged PIN Schottky technology * Zero reverse recovery current * High-frequency operation * Temperature-independent switching behavior * AEC-Q101 qualified and PPAP capable * Humidity resistant TO-263-2 Package Types: TO-263-2 PN: E4D20120G Wolfspeed, Inc. is in the process o. |
E4D20120G Datasheet and Specifications PDF
The E4D20120G is a 20A Silicon Carbide Schottky Diode.
Key Specifications
| Package | TO-263-2 |
|---|---|
| Height | 4.82 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | E4D20120G Datasheet |
|---|---|
| Description | Silicon Carbide Schottky Diode |
| Manufacturer | Cree |
| Overview |
E4D20120G
Silicon Carbide Schottky Diode
E-Series Automotive
Features
Package
• 4th Generation SiC Merged PIN Schottky Technology • Zero Reverse Recovery Current • High-Frequency Opera.
Package
* 4th Generation SiC Merged PIN Schottky Technology * Zero Reverse Recovery Current * High-Frequency Operation * Temperature-Independent Switching Behavior * AEC-Q101 Qualified and PPAP Capable * Humidity Resistant Benefits TO-263-2 * Replace Bipolar with Unipolar Rectifiers * Essential. |