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UGF18060 Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

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Description

UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency ba.

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Datasheet Specifications

Part number
UGF18060
Manufacturer
CREE
File Size
107.59 KB
Datasheet
UGF18060-CREE.pdf
Description
Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

Applications

* in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
* ALL GOLD metal system for highest reliability
* Industry standard package
* Suggested alterna

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Broadband Power N-Channel Enhancement-Mode Lateral MOSFET CREE
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