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UGF18060 Datasheet - CREE

UGF18060 Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. ALL GOLD metal system for highest reliability Industry standard package Suggested alternative to the MRF18060 Internally matched for repeatable manu.

UGF18060-CREE.pdf

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Datasheet Details

Part number:

UGF18060

Manufacturer:

CREE

File Size:

107.59 KB

Description:

Broadband rf power n-channel enhancement-mode lateral mosfet.

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UGF18060 UGF18060 Broadband Power N-Channel Enhancement-Mode Lateral MOSFET CREE

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