Datasheet4U Logo Datasheet4U.com

UGF09030 Datasheet - CREE

UGF09030 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. ALL GOLD metal system for highest reliability Industry standard package Suggested alternative to the MRF9030 Internally matched for repeatable manufactur.

UGF09030 Datasheet (175.92 KB)

Preview of UGF09030 PDF
UGF09030 Datasheet Preview Page 2 UGF09030 Datasheet Preview Page 3

Datasheet Details

Part number:

UGF09030

Manufacturer:

CREE

File Size:

175.92 KB

Description:

26v broadband rf power n-channel enhancement-mode lateral mosfet.

📁 Related Datasheet

UGF09085 RF Power N-Channel Enhancement-Mode Lateral MOSFET (CREE)

UGF1004G Isolated Ultra Fast Rectifiers (Taiwan Semiconductor)

UGF1004G 10 Ampere Insulated Common Cathode Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)

UGF1004G Ultra Fast Rectifiers (JGD)

UGF1004GD 10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)

UGF1004GS 10 Ampere Insulated Series Connection Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)

UGF1005G Isolated Ultra Fast Rectifiers (Taiwan Semiconductor)

UGF1005G 10 Ampere Insulated Common Cathode Ultra Fast Recovery Half Bridge Rectifiers (Thinki Semiconductor)

TAGS

UGF09030 26V Broadband Power N-Channel Enhancement-Mode Lateral MOSFET CREE

UGF09030 Distributor