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UGF09030 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

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Description

UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800.

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Datasheet Specifications

Part number
UGF09030
Manufacturer
CREE
File Size
175.92 KB
Datasheet
UGF09030-CREE.pdf
Description
26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

Applications

* in the frequency band 800MHz to 1000MHz. Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
* ALL GOLD metal system for highest reliability
* Industry standard package
* Suggested altern

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