UPF1030 Datasheet (CREE) - Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

UPF1030, Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

UPF1030 30W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz.

Rater with a minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

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Industry standard package.

Low intermodulation distortion of 30dBc at 30W