UPF1060 Datasheet (CREE) - Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

UPF1060, Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz.

Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

www.DataSheet4U.com ALL GOLD metal system for highest reliability.

Industry standard package.

Low intermodulation distortion of 30dBc at 60W