CT3400A-R3 N-Channel MOSFET

CT Micro

Description

CT3400A-R3 N-Channel Enhancement MOSFET .
The CT3400A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous.

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Datasheet Specifications

Part number: CT3400A-R3
Manufacturer: CT Micro
File Size: 3.06 MB
Datasheet: CT3400A-R3-CTMicro.pdf
Description: N-Channel MOSFET

Features

* Drain-Source Breakdown Voltage VDSS 30 V
* Drain-Source On-Resistance RDS(ON) 23.0mΩ, at VGS= 10V, IDS= 6.0A RDS(ON) 26.0mΩ, at VGS= 4.5V, IDS= 5.0A RDS(ON) 35mΩ, at VGS= 2.5V, IDS= 4.0A ℃
* Continuous Drain Current at TA=25 ID = 5.8A
* Advanced high cell density Tre

Applications

* Power Management
* LED Display
* DC-DC System

CT3400A-R3 Distributors

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CT3400A-R3 N-Channel MOSFET CT Micro

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