CT3401A-R3 Datasheet (CT Micro)

CT3401A-R3, P-Channel MOSFET

The CT3401A-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.

Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Aug, 2015 CT3401A-R3 P-Cha

CT3401A-R3 Features

* Drain-Source Breakdown Voltage VDSS - 30 V

* Drain-Source On-Resistance RDS(ON) 33mΩ, at VGS= - 10V, IDS= - 4.2A RDS(ON) 38mΩ, at VGS= - 4.5V, IDS= - 4.0A RDS(ON) 51mΩ, at VGS= - 2.5V, IDS= - 1.0A ℃

* Continuous Drain Current at TA=25 ID = - 4.2A

* Advanced high cell