* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating package BVDSS ID@ TC=25C, VGS=-4.5V ID@ TA=25C, VGS=-4.5V RDSON @VGS=-4.5V, ID=-10A RDSON @VGS=-2.5V, ID=-7A RDSON @VGS=-1.8V, ID=-5A -14V -20.8A -6.5A 22mΩ(typ.) 28mΩ(typ
MTA028P01V8 Datasheet (671.43 KB)
MTA028P01V8
CYStech Electronics
671.43 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTA028P01V8
Spec. No. : C101V8 Issued Date : 2018.08.16 Revised Date : 2018.08.17 P.
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