MTA025P01N6 P-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C089N6 Issued Date : 2015.11.23 Revised Date : 2016.03.18 Page No.: 1/9 P-Channel Enhancement Mode Power MOSF.

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Datasheet Specifications

Part number: MTA025P01N6
Manufacturer: Cystech Electonics
File Size: 400.50 KB
Datasheet: MTA025P01N6-CystechElectonics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Small package outline
* Pb-free lead plating and halogen-free package Equivalent Circuit MTA025P01N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of pa

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MTA025P01N6 P-Channel Enhancement Mode Power MOSFET Cystech Electonics

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