* Single Drive Requirement
* Low On-resistance
* Fast switching Characteristic
* Pb-free lead plating package BVDSS ID @ VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-10A -30V -56A 4.2mΩ(typ) 4.8mΩ(typ) Symbol MTB5D0P03FP Outline TO-220FP G：
MTB5D0P03FP Datasheet (354.76 KB)
MTB5D0P03FP
CYStech Electronics
354.76 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB5D0P03FP Spec. No. : C965FP Issued Date : 2015.07.20 Revised Date : 2015.07.21 P.
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