* Single Drive Requirement
* Low On-resistance
* Fast switching Characteristic
* Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G：Gate D：Drain S：Source
MTP425I3 Datasheet (322.92 KB)
MTP425I3
CYStech Electronics
322.92 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C391I3 Issued Date : 2012.11.27 Revised Date : Page No. : 1/8
MTP425I3.
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