MTP425I3 - P-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Datasheet Details

Part number	MTP425I3
Manufacturer	CYStech Electronics
File Size	322.92 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	MTP425I3-CYStechElectronics.pdf

Single Drive Requirement.
Low On-resistance.
Fast switching Characteristic.
Pb-free lead plating package BVDSS ID RDS(ON)@VGS=-10V, ID=-10A RDS(ON)@VGS=-5V, ID=-7A -30V -50A 10mΩ(typ) 14mΩ(typ) Symbol MTP425I3 Outline TO-251AB TO-251S G：Gate D：Drain S：Source G D S G D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C Continuous Drain Current @VGS=-10.

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Published: May 25, 2014 |