MTP40N10E Datasheet - Motorola

MTP40N10E TMOS POWER FET

MOTOROLA w m o Advance Data Sheet.c U TMOS E-FET t4 . ™ eEffect Transistor Power Field e N Channel h Enhancement Mode Silicon Gate S a t a D . w w This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, .

MTP40N10E Features

* inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. TJ = 25°C GATE

* TO

* SOURCE OR DRAIN

* TO

* SO

MTP40N10E_Motorola.pdf