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MTP40N10E TMOS POWER FET

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Description

MOTOROLA w m o Advance Data Sheet.c U TMOS E-FET t4 .™ eEffect Transistor Power Field e N *Channel h Enhancement *Mode Silicon Gate S.

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Datasheet Specifications

Part number
MTP40N10E
Manufacturer
Motorola
File Size
154.29 KB
Datasheet
MTP40N10E_Motorola.pdf
Description
TMOS POWER FET

Features

* inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. TJ = 25°C GATE
* TO
* SOURCE OR DRAIN
* TO
* SO

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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