MTP4N50E Datasheet - Motorola

MTP4N50E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductiv.

MTP4N50E Features

* 1. Capacitance Variation Figure 12. Gate Charge versus Gate

* To

* Source Voltage COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Figure 14 defines the limits of safe operation for commutated source

* drain current versus re

* applied dr

MTP4N50E_Motorola.pdf