MTP4N50E - TMOS POWER FET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain to source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductiv
MTP4N50E Features
* 1. Capacitance Variation Figure 12. Gate Charge versus Gate
* To
* Source Voltage COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Figure 14 defines the limits of safe operation for commutated source
* drain current versus re
* applied dr
