MTP4N50E TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N *Channel Enhancement *Mode Silicon Gate This a.

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Datasheet Specifications

Part number: MTP4N50E
Manufacturer: Motorola
File Size: 190.66 KB
Datasheet: MTP4N50E_Motorola.pdf
Description: TMOS POWER FET

Features

* 1. Capacitance Variation Figure 12. Gate Charge versus Gate
* To
* Source Voltage COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Figure 14 defines the limits of safe operation for commutated source
* drain current versus re
* applied dr

Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

MTP4N50E Distributors

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MTP4N50E TMOS POWER FET Motorola

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