Datasheet4U Logo Datasheet4U.com

MTP4N50E Datasheet - Motorola

MTP4N50E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ High Energy Power FET N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductiv.

MTP4N50E Features

* 1. Capacitance Variation Figure 12. Gate Charge versus Gate

* To

* Source Voltage COMMUTATING SAFE OPERATING AREA (CSOA) The Commutating Safe Operating Area (CSOA) of Figure 14 defines the limits of safe operation for commutated source

* drain current versus re

* applied dr

MTP4N50E Datasheet (190.66 KB)

Preview of MTP4N50E PDF

Datasheet Details

Part number:

MTP4N50E

Manufacturer:

Motorola

File Size:

190.66 KB

Description:

Tmos power fet.

📁 Related Datasheet

MTP4N50 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N50E High Energy Power FET (ON Semiconductor)

MTP4N08 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N10 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N40E TMOS POWER FET (Motorola)

MTP4N45 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N80E TMOS POWER FET 4.0 AMPERES 800 VOLTS (Motorola)

MTP4N85 Power MOSFET (Motorola)

MTP4N90 Power MOSFET (Motorola)

MTP40008 Three-Phase Bridge Rectifier (nELL)

TAGS

MTP4N50E TMOS POWER FET Motorola

Image Gallery

MTP4N50E Datasheet Preview Page 2 MTP4N50E Datasheet Preview Page 3

MTP4N50E Distributor