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MTP4N40E TMOS POWER FET

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gat.

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Datasheet Specifications

Part number
MTP4N40E
Manufacturer
Motorola
File Size
181.27 KB
Datasheet
MTP4N40E_Motorola.pdf
Description
TMOS POWER FET

Features

* eadily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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