Datasheet4U Logo Datasheet4U.com

MTP4N80E Datasheet - Motorola

MTP4N80E TMOS POWER FET 4.0 AMPERES 800 VOLTS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain to <.

MTP4N80E Features

* evable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 28

MTP4N80E Datasheet (154.49 KB)

Preview of MTP4N80E PDF

Datasheet Details

Part number:

MTP4N80E

Manufacturer:

Motorola

File Size:

154.49 KB

Description:

Tmos power fet 4.0 amperes 800 volts.

📁 Related Datasheet

MTP4N85 Power MOSFET (Motorola)

MTP4N08 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N10 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N40E TMOS POWER FET (Motorola)

MTP4N45 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N50 N-Channel Power MOSFET (Fairchild Semiconductor)

MTP4N50E TMOS POWER FET (Motorola)

MTP4N50E High Energy Power FET (ON Semiconductor)

MTP4N90 Power MOSFET (Motorola)

MTP40008 Three-Phase Bridge Rectifier (nELL)

TAGS

MTP4N80E TMOS POWER FET 4.0 AMPERES 800 VOLTS Motorola

Image Gallery

MTP4N80E Datasheet Preview Page 2 MTP4N80E Datasheet Preview Page 3

MTP4N80E Distributor