MTP4435BV8 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics

Description

CYStech Electronics Corp.Spec.No.: C107V8 Issued Date : 2016.02.17 Revised Date : Page No.: 1/9 P-Channel Enhancement Mode Power MOSFET MTP4435B.

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Datasheet Specifications

Part number: MTP4435BV8
Manufacturer: CYStech Electronics
File Size: 359.26 KB
Datasheet: MTP4435BV8-CYStechElectronics.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating package RDSON@VGS=-5V, ID=-7A -30V -10.5A -32.4A 12.6mΩ(typ. ) 16.9mΩ(typ. ) Equivalent Circuit MTP4435BV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Informati

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4435BV8 CYStek Product Specification

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MTP4435BV8 P-Channel Enhancement Mode Power MOSFET CYStech Electronics

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