* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating package RDSON@VGS=-5V, ID=-7A -30V -10.5A -32.4A 12.6mΩ(typ.) 16.9mΩ(typ.) Equivalent Circuit MTP4435BV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Informati
MTP4435BV8 Datasheet (359.26 KB)
MTP4435BV8
CYStech Electronics
359.26 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C107V8 Issued Date : 2016.02.17 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTP4435B.
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