* Excellent HFE Characteristics up to 1A
* Low Saturation Voltage, VCE(sat)=0.11V(typ)@IC=1A, IB=50mA
* 5A peak pulse current
* Pb-free lead plating and halogen-free package Symbol BTN1053I3 Outline TO-251 B：Base C：Collector E：Emitter BB CC E Ordering Information
BTN1053I3 Datasheet (302.24 KB)
BTN1053I3
CYStech
302.24 KB
Npn epitaxial planar transistor.
CYStech Electronics Corp.
Spec. No. : C818I3 Issued Date : 2010.01.26 Revised Date : 2014.02.26 Page No. : 1/7
NPN Epitaxial Planar Transistor
BTN10.
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