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BTN1101E3 Low Vcesat NPN Epitaxial Planar Transistor

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Description

CYStech Electronics Corp.Low Vcesat NPN Epitaxial Planar Transistor BTN1101E3 Spec.No.: C606E3-A Issued Date : 2005.01.03 Revised Date :2008.01.30.

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Datasheet Specifications

Part number
BTN1101E3
Manufacturer
CYStech
File Size
134.94 KB
Datasheet
BTN1101E3-CYStech.pdf
Description
Low Vcesat NPN Epitaxial Planar Transistor

Features

* Low VCE(sat)
* High BVCEO
* Excellent current gain characteristics
* RoHS compliant package Symbol BTN1101E3 Outline TO-220AB B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN1101E3 CYStek Product Specification

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