* High breakdown voltage. (BVCEO=500V)
* Low collector-emitter saturation voltage VCESAT.
* High collector current capability IC and ICM.
* High collector current gain HFE at high collector current IC.
* Low collector output capacitance. (Typ. 5pF at VCB =20V)
BTNA45N3 Datasheet (279.24 KB)
BTNA45N3
CYStech
279.24 KB
Npn high voltage planar transistor.
CYStech Electronics Corp.
NPN High Voltage Planar Transistor
BTNA45N3
BVCEO IC VCESAT
Spec. No. : C241N3 Issued Date : 2011.06.10 Revised Date : 20.
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