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MTD5D0P03J3 P-Channel Enhancement Mode Power MOSFET

MTD5D0P03J3 Description

CYStech Electronics Corp.P-Channel Enhancement Mode Power MOSFET MTD5D0P03J3 Spec.No.: C965J3 Issued Date : 2018.04.13 Revised Date : 2018.05.04 P.

MTD5D0P03J3 Features

* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package BVDSS ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-25A RDSON@VGS=-6V, ID=-10A -30V -102A(silicon limit) 3.9mΩ(typ. ) 5.6mΩ(typ. ) Equivalent Circuit MTD5D0P03J3 Outline TO-252(DPAK) G：

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Datasheet Details

Part number
MTD5D0P03J3
Manufacturer
CYStech
File Size
486.40 KB
Datasheet
MTD5D0P03J3-CYStech.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET CYStech
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