* Low Gate Charge
* Simple Drive Requirement
* Pb-free lead plating & Halogen-free package BVDSS ID@ VGS=-10V, TC=25°C RDSON@VGS=-10V, ID=-25A RDSON@VGS=-6V, ID=-10A -30V -102A(silicon limit) 3.9mΩ(typ.) 5.6mΩ(typ.) Equivalent Circuit MTD5D0P03J3 Outline TO-252(DPAK) G：
MTD5D0P03J3 Datasheet (486.40 KB)
MTD5D0P03J3
CYStech
486.40 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTD5D0P03J3
Spec. No. : C965J3 Issued Date : 2018.04.13 Revised Date : 2018.05.04 P.
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