* VDS=110V RDS(ON)(typ)=135mΩ@VGS=10V, ID=1.5A
* Low on-resistance
* Low gate charge
* Excellent thermal and electrical capabilities
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TA=25°C RDSON(TYP) 110V 1.9A 135mΩ Equivalent Circuit MTN2
MTN2328AN3 Datasheet (342.90 KB)
MTN2328AN3
CYStech
342.90 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp. Spec. No. : C583N3 Issued Date : 2015.07.10 Revised Date : 2016.05.27 Page No. : 1/ 8 110V N-Channel Enhancement Mode MOSF.
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