* Low on-resistance
* Simple drive requirement
* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON(TYP) VGS=-10V,
MTP8107X8 Datasheet (371.37 KB)
MTP8107X8
CYStech
371.37 KB
P-channel enhancement mode mosfet.
CYStech Electronics Corp.
Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 1/9
P-Channel Enhancement Mode MOSFET
MTP8107X8
Feat.
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