NE2SC5606 Datasheet - California Eastern Labs

NE2SC5606 NPN SILICON RF TRANSISTOR

NE2SC5606 Features

* Suitable for high-frequency oscillation

* fT = 25 GHz technology adopted

* 3-pin ultra super minimold (19, 1608 PKG) package ORDERING INFORMATION Part Number NEC66219 2SC5606 NE66219-T1 2SC5606-T1 Order Number NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A Package 3-pin

NE2SC5606-CaliforniaEasternLabs.pdf

NE2SC5606 Datasheet Preview — Preview of NE2SC5606 PDF

Datasheet Details

Part number:

NE2SC5606

Manufacturer:

California Eastern Labs

File Size:

329.13 KB

Description:

Npn silicon rf transistor.

NE2SC5606 Distributor

📁 Related Datasheet

NE2001-VA20 Near edge thermal printhead (8 dots / mm) (Rohm)

NE2001-VA20A Near edge thermal printhead (8 dots / mm) (Rohm)

NE2002-VA10A Near edge thermal printhead (8 dots / mm) (Rohm)

NE2004-VA10A Near edge thin film thermal printhead (8 dots / mm) (Rohm)

NE202 ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)

NE20248 ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)

NE20283A ULTRA LOW NOISE K BAND HETERO JUNCTION FET (NEC)

NE202930 Silicon NPN Epitaxial High Frequency Transistor (Renesas)

TAGS

NE2SC5606 NE2SC5606 NPN SILICON TRANSISTOR California Eastern Labs