Part number:
CJD45H11
Manufacturer:
File Size:
460.22kb
Download:
Description:
Complementary silicon.
PDF File Details
CJD45H11
460.22kb
Complementary silicon.
📁 Related Datasheet
CJD4410 - N-Channel MOSFET
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate MOSFETS
CJD4410 N-Channel 30-V(D-S) MOSFET
FEATURE TrenchFET Power M.
CJD4435 - P-Channel MOSFET
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate MOSFETS
CJD4435 P-Channel 30-V(D-S) MOSFET
V(BR)DSS
-30 9
RDS(on)M.
CJD44H11 - COMPLEMENTARY SILICON
(Central Semiconductor Corp)
.
CJD47 - NPN SILICON POWER TRANSISTOR
(Central Semiconductor Corp)
CJD47 CJD50
SURFACE MOUNT SILICON NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD47 and CJD50 a.
CJD01N60 - N-Channel Power MOSFET
(ZPSEMI)
CJD01N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced termina.
CJD01N60 - N-Channel Power MOSFET
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N60 N-Channel Power MOSFET
General Description The hig.
CJD01N65B - N-Channel Power MOSFET
(ZPSEMI)
CJD01N65B
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N65B N-Channel Power MOSFET
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to.
CJD01N80 - N-Channel Power MOSFET
(ZPSEMI)
CJD01N80
TO-251-3L Plastic-Encapsulate MOSFETS
CJD01N80 N-Channel Power MOSFET
GENERAL DESCRIPTION The CJD01N80 is an N-channel mode power MOSFET us.
CJD02N60 - N-Channel MOSFET
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
4.
CJD02N60 - N-Channel Power MOSFET
(ZPSEMI)
CJD02N60
TO-251-3L Plastic-Encapsulate MOSFETS
CJD02N60 N-Channel Power MOSFET
General Description The high voltage MOSFET uses an advanced terminat.
Stock and price
TAGS
