1N3595 SILICON LOW LEAKAGE DIODE

Central Semiconductor

Description

1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE .
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications.

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Datasheet Specifications

Part number: 1N3595
Manufacturer: Central Semiconductor ↗
File Size: 75.27 KB
Datasheet: 1N3595-CentralSemiconductor.pdf
Description: SILICON LOW LEAKAGE DIODE

Applications

* Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.0s pulse) Peak

1N3595 Distributors

📁 Related Datasheet

1N3595-1 1N3595-M 1N3595A-1 1N3595UR-1 1N3595US 1N3506A

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1N3595 SILICON LOW LEAKAGE DIODE Central Semiconductor

Central Semiconductor 1N3595-like datasheet