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1N3595 SILICON LOW LEAKAGE DIODE

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Description

1N3595 SILICON LOW LEAKAGE DIODE JEDEC DO-35 CASE .
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications.

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Applications

* Higher breakdown voltage devices are available on special order. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.0s pulse) Peak

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📁 Related Datasheet

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SILICON LOW LEAKAGE DIODE Central Semiconductor
Central Semiconductor 1N3595-like datasheet