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2N5114 - SILICON P-CHANNEL JFETS

Description

The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications.

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2N5114 2N5115 2N5116 SILICON P-CHANNEL JFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5114, 2N5115, and 2N5116 are silicon P-Channel JFETs designed for switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 30 30 50 500 -65 to +200 UNITS V V mA mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5114 2N5115 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 500 - 500 IGSS VGS=20V, TA=150°C - 1.0 - 1.0 IDSS VDS=18V 30 90 -- IDSS VDS=15V -- 15 60 ID(OFF) VDS=15V, VGS=12V - 500 -- ID(OFF) VDS=15V, VGS=7.
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