BCW65
DESCRIPTION
: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IB IBM PD TJ, Tstg ΘJA
BCW66
-65 to +150
UNITS V V V m A A m A m A m W °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCEO
ICBO
VCB= Rated VCEO, TA=150°C
IEBO
VEB=4.0V
BVCBO
IC=10μA (BCW65)
BVCBO
IC=10μA (BCW66)
BVCEO
IC=10m A...
