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CMLDM3757

Dual-Channel MOSFET

CMLDM3757 Features

* ESD protection up to 1800V (Human Body Model)

* 350mW power dissipation

* Very low rDS(ON)

* Low threshold voltage

* Logic level compatible

* Small, SOT-563 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage C

CMLDM3757 General Description

The CENTRAL SEMICONDUCTOR CMLDM3757 consists of complementary silicon N-Channel and P-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier and driver applications. These MOSFETs offer very low rDS(ON) and low threshold voltage. MARKING CODE: 3C7 SOT-563 CASE APPLICATIONS:
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CMLDM3757 Datasheet (1.52 MB)

Preview of CMLDM3757 PDF

Datasheet Details

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CMLDM3757 Dual-Channel MOSFET Central Semiconductor

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