CMRDM3575 Datasheet (Central Semiconductor) - SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS

CMRDM3575, SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS

The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver applications.

These MOSFETs offer low rDS(ON) and low threshold voltage.

MARKING CODE: CT SOT-963 CASE * Device is Hal

CMRDM3575 Features

* Power dissipation: 125mW

* Low package profile: 0.5mm (MAX)

* Low rDS(ON)

* Low threshold voltage

* Logic level compatible

* Small SOT-963 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu