CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS

Central Semiconductor

Description

CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed.

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Datasheet Specifications

Part number: CMRDM3575
Manufacturer: Central Semiconductor ↗
File Size: 498.02 KB
Datasheet: CMRDM3575-CentralSemiconductor.pdf
Description: SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS

Features

* Power dissipation: 125mW
* Low package profile: 0.5mm (MAX)
* Low rDS(ON)
* Low threshold voltage
* Logic level compatible
* Small SOT-963 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu

Applications

* These MOSFETs offer low rDS(ON) and low threshold voltage. MARKING CODE: CT SOT-963 CASE
* Device is Halogen Free by design APPLICATIONS:
* Load/Power switches
* Power supply converter circuits

CMRDM3575 Distributors

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CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS Central Semiconductor

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