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CMRDM3590

SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET

CMRDM3590 Features

* Power dissipation: 125mW

* Low package profile: 0.5mm (MAX)

* Low rDS(ON)

* Low threshold voltage

* Logic level compatible

* Small SOT-963 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu

CMRDM3590 General Description

The CENTRAL SEMICONDUCTOR CMRDM3590 is an enhancement-mode dual N-Channel MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE: CR SOT-963 CASE

* Device i.

CMRDM3590 Datasheet (701.11 KB)

Preview of CMRDM3590 PDF

Datasheet Details

Part number:

CMRDM3590

Manufacturer:

Central Semiconductor ↗

File Size:

701.11 KB

Description:

Surface mount silicon dual n-channel enhancement-mode mosfet.

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CMRDM3590 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET Central Semiconductor

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