CMRDM3590 Datasheet (Central Semiconductor) - SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET

CMRDM3590, SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET

The CENTRAL SEMICONDUCTOR CMRDM3590 is an enhancement-mode dual N-Channel MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers low rDS(ON) and low threshold voltage.

MARKING CODE: CR SOT-963 CASE * Device i

CMRDM3590 Features

* Power dissipation: 125mW

* Low package profile: 0.5mm (MAX)

* Low rDS(ON)

* Low threshold voltage

* Logic level compatible

* Small SOT-963 surface mount package MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu