CP283 Datasheet (Central Semiconductor) - Power Transistor NPN

CP283, Power Transistor NPN - Silicon Power Transistor Chip

PROCESS CP283 Power Transistor NPN - Silicon Power Transistor Chip CentralTM Semiconductor Corp.

PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization 68 x 68 MILS 9.5 MILS 18 x 11 MILS 18 x 12 MILS Al - 45,000Å Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å) GEOMETRY GROSS DIE PER 5 INCH WAFER 3,675 PRINCIPAL DEVICE TYPES MJE13003 www.DataSheet4U.com 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 43