CP289 Datasheet (Central Semiconductor) - Power Transistors 8.0 Amp NPN

CP289, Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip

PROCESS CP289 Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip PROCESS DETAILS Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY 167 x 167 MILS 9.5 MILS 59 x 29 MILS 64 x 28 MILS Al - 45,000Å Ti/Ni/Ag - 3,000Å, 10,000Å, 10,000Å GROSS DIE PER 5 INCH WAFER 558 PRINCIPAL DEVICE TYPES MJE13009 www.DataSheet4U.com 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com