CTLDM8120-M832D Datasheet - Central Semiconductor

CTLDM8120-M832D - SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers Low rDS(ON) and Low Threshold Voltage.

MARKING CODE: CFVS TLM832DS CASE APPLICAT

CTLDM8120-M832D Features

* ESD protection up to 2kV

* Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)

* High current (ID=0.95A)

* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t

CTLDM8120-M832D-CentralSemiconductor.pdf

CTLDM8120-M832D Datasheet Preview — Preview of CTLDM8120-M832D PDF

CTLDM8120-M832D Datasheet Preview Page 2

CTLDM8120-M832D Datasheet Preview Page 3

Datasheet Details

Part number:

CTLDM8120-M832D

Manufacturer:

Central Semiconductor ↗

File Size:

764.41 KB

Description:

Surface mount dual p-channel enhancement-mode silicon mosfet.

📁 Related Datasheet

CTLDM8002A-M621 CTLDM303N-M832DS CTLDM7590 CTLD-4204S CTLD-6206S CTL-10-S50-30F-CL

📌 All Tags

CTLDM8120-M832D SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor