Part number:
CTLDM8120-M832D
Manufacturer:
File Size:
764.41 KB
Description:
Surface mount dual p-channel enhancement-mode silicon mosfet.
The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.
This MOSFET offers Low rDS(ON) and Low Threshold Voltage.
MARKING CODE: CFVS TLM832DS CASE APPLICAT
CTLDM8120-M832D Features
* ESD protection up to 2kV
* Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)
* High current (ID=0.95A)
* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t
CTLDM8120-M832D-CentralSemiconductor.pdf
Datasheet Details
CTLDM8120-M832D
764.41 KB
Surface mount dual p-channel enhancement-mode silicon mosfet.
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