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CTLDM8120-M832D Datasheet - Central Semiconductor

CTLDM8120-M832D SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CFVS TLM832DS CASE APPLICAT.

CTLDM8120-M832D Features

* ESD protection up to 2kV

* Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)

* High current (ID=0.95A)

* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t

CTLDM8120-M832D-CentralSemiconductor.pdf

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Datasheet Details

Part number:

CTLDM8120-M832D

Manufacturer:

Central Semiconductor ↗

File Size:

764.41 KB

Description:

Surface mount dual p-channel enhancement-mode silicon mosfet.

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CTLDM8120-M832D CTLDM8120-M832D SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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