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CTLDM8120-M832D SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

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Description

CTLDM8120-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for hig.

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Features

* ESD protection up to 2kV
* Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)
* High current (ID=0.95A)
* Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current, t

Applications

* This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING CODE: CFVS TLM832DS CASE APPLICATIONS:
* Switching Circuits
* DC-DC Converters

CTLDM8120-M832D Distributors

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CTLDM8120-M832D SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor
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