CTLDM303N-M832DS Datasheet - Central Semiconductor

CTLDM303N-M832DS, SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver ap.

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Datasheet Details

Part number:

CTLDM303N-M832DS

Manufacturer:

Central Semiconductor ↗

File Size:

300.79 KB

Description:

SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Features

* Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
* High current (ID=3.6A)
* Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junctio

Applications

* This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CASE MARKING CODE: C330 APPLICATIONS:
* DC-DC converters
* Drive circuits

CTLDM303N-M832DS Distributors

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CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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