CTLDM303N-M832DS Datasheet, Mosfet, Central Semiconductor

CTLDM303N-M832DS Features

• Mosfet
• Low rDS(ON) (0.078Ω MAX @ VGS=2.5V)
• High current (ID=3.6A)
• Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous

PDF File Details

Part number:

CTLDM303N-M832DS

Manufacturer:

Central Semiconductor ↗

File Size:

300.79kb

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📄 Datasheet

Description:

Surface mount dual n-channel enhancement-mode silicon mosfet. The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplif

CTLDM303N-M832DS Application

• Applications This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. TLM832DS CASE MARKING CODE

TAGS

CTLDM303N-M832DS

Central Semiconductor

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