Datasheet4U Logo Datasheet4U.com

MJ10023 - NPN SILICON POWER DARLINGTON TRANSISTOR

Description

The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications.

📥 Download Datasheet

Datasheet preview – MJ10023

Datasheet Details

Part number MJ10023
Manufacturer Central Semiconductor
File Size 70.67 KB
Description NPN SILICON POWER DARLINGTON TRANSISTOR
Datasheet download datasheet MJ10023 Datasheet
Additional preview pages of the MJ10023 datasheet.

📁 Similar Datasheet

  • MJ10023 - 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10023 - NPN Transistor (INCHANGE)
  • MJ10023 - NPN Transistor (DIGITRON)
  • MJ10023 - Silicon NPN Transistor (NTE)
  • MJ10020 - Power Transistors (Mospec Semiconductor)
  • MJ10020 - 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10021 - 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS (Motorola Inc)
  • MJ10021 - Power Transistors (Mospec Semiconductor)
  • MJ10021 - NPN Silicon Power Darlington Transistor (NTE)
  • MJ10021 - Darlington Power Transistor (Multicomp)
Other Datasheets by Central Semiconductor

Full PDF Text Transcription

Click to expand full text
DATA SHEET MJ10023 NPN SILICON POWER DARLINGTON TRANSISTOR JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MJ10023 is a Silicon NPN Power Darlington Transistor, mounted in a hermetically sealed metal case, designed for high voltage, high speed, power applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCEO VCEV VEBO IC ICM IB IBM PD TJ,Tstg ΘJC ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) 400 600 8.0 40 80 20 40 250 -65 to +200 0.
Published: |