CEM4804 Datasheet, Transistor, Chino-Excel Technology

CEM4804 Features

• Transistor 30V , 7.9A , RDS(ON)=20mΩ @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1

PDF File Details

Part number:

CEM4804

Manufacturer:

Chino-Excel Technology

File Size:

106.35kb

Download:

📄 Datasheet

Description:

Dual n-channel enhancement mode field effect transistor.

TAGS

CEM4804

Chino-Excel Technology

📁 Related Datasheet

CEM4800A - N-Channel MOSFET (Chino-Excel Technology)
CEM4800A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.0A, RDS(ON) = 13.5mΩ (typ) @VGS = 10V. RDS(ON) = 20mΩ (typ) @VGS = 4.5V. S.

CEM4804A - Dual N-Channel MOSFET (CET)
CEM4804A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super hig.

CEM4808 - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell.

CEM4892 - N-Channel MOSFET (Chino-Excel Technology)
CEM4892 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 12A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 18mΩ @VGS = 4.5V. Super high dense .

CEM4042 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 40V, 18A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.5mΩ @VGS = 4.5V. .

CEM4042 - N-Channel MOSFET (VBsemi)
CEM4042-VB CEM4042-VB Datasheet N-Channel 40-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 40 0.0057 at.

CEM4052 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4052 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 16A, RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 10mΩ @VGS = 4.5V. Super high dens.

CEM4063 - p- (CET)
CEM4063 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -40V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 14mΩ @VGS = -4.5V.

CEM4201 - p- (CET)
CEM4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -7.5A, RDS(ON) = 28mΩ @VGS = -10V. RDS(ON) = 38mΩ @VGS = -4.5V. Super high .

CEM4204 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM4204 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 7.3A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. Super high dens.