CEM8208 Features
* 20V, 7A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. ESD Protected: 2000 V D1 D1 D2 D2 8765 5 SO-8 1 1234 S1 G1 S2 G2 ABSOLUTE MA
CEM8208-Chino-ExcelTechnology.pdf
Datasheet Details
CEM8208, CEM8208-Chino
Chino-Excel Technology
369.96 KB
Dual n-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEM8208, CEM8208-Chino.
Please refer to the document for exact specifications by model.
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