3401
ChipSourceTek
400.63 KB
P-channel-enhanced mos field-effect transistor.
3401
RDS(ON), Vgs@-4.5V, Ids@-1.0A = 48mΩ@TYP RDS(ON), Vgs@-2.5V, Ids@-0.5A = 75mΩ@TYP
P MOS
1
*
*
SOT-23
D
Drain
D
3
k 1
2
.
📁 Related Datasheet
3400 - 5-Series Chipset
(Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset
Datasheet
January 2012
Document Number: 322169-004
INFORMATION IN THIS DOCUMENT IS PROVIDED IN.
3400 - N-Channel MOSFET
(GOFORD)
GOFORD
DESCRIPTION
The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .
3400 - N-Channel MOSFET
(Doingter)
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w.
3401 - P-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.
3401 - P-Channel MOSFET
(CXW)
P-channel Enhancement Mode MOSFET
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Thi.
3401 - MOSFET
(GFD)
3401
DESCRIPTION
The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2..
3402A - (3402xA - 3410xA) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time
3402A - 3410A 3402FA - 3410FA 3.
3402B - (3402xB - 3410xB) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time
3402B - 3410B 3402FB - 3410FB 3.
