3402B
VMI
170.08kb
(3402xb - 3410xb) three phase bridge.
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📁 Related Datasheet
3402A - (3402xA - 3410xA) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time
3402A - 3410A 3402FA - 3410FA 3.
3402FA - (3402xA - 3410xA) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time
3402A - 3410A 3402FA - 3410FA 3.
3402FB - (3402xB - 3410xB) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time
3402B - 3410B 3402FB - 3410FB 3.
3402S - Super Bright LED Lamp
(STANLEY)
.
3402UFA - (3402xA - 3410xA) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time
3402A - 3410A 3402FA - 3410FA 3.
3402UFB - (3402xB - 3410xB) Three Phase Bridge
(VMI)
..
200 V - 1,000 V Three Phase Bridge
18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time
3402B - 3410B 3402FB - 3410FB 3.
3400 - 5-Series Chipset
(Intel)
Intel® 5 Series Chipset and Intel® 3400 Series Chipset
Datasheet
January 2012
Document Number: 322169-004
INFORMATION IN THIS DOCUMENT IS PROVIDED IN.
3400 - N-Channel MOSFET
(GOFORD)
GOFORD
DESCRIPTION
The 3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as .
3400 - N-Channel MOSFET
(Doingter)
Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a w.
3401 - P-Channel Enhancement Mode Power MOSFET
(H&M Semiconductor)
HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.