CST2301D-S50
Description
SOT23 Pin Configuration
The S50 is the high cell density trenched
P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
技 The S50 meet the Ro HS and Green Product k requirement with full function reliability approved.
科 Te Absolute Maximum Ratings
特 e Symbol 源 rc VDS
VGS u ID@TA=25℃
ID@TA=70℃
矽 o IDM
PD@TA=25℃
S TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range ip Thermal Data h Symbol CRθJA
Parameter Thermal Resistance Junction-ambient 1
Rating -20 ±12 -3 -2.4 -12 1
-55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Typ. ---
Max. 125
Unit ℃/W
RθJC
Thermal Resistance Junction-Case1
---
℃/W
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