HYG053N10NS1C2 - N-Channel Enhancement Mode MOSFET
* 100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD * 100% Avalanche Tested * Reliable and Rugged * Halogen-Free Devices Available (RoHS Compliant) k HYG053N10NS1C2 Applications e * Switching application * Power management for inverter systems T * Battery manage
