CPC5603

N-Channel MOSFET

Clare

CPC5603 Features

* 415V Drain-to-Source Voltage

* Depletion Mode Device Offers Low RDS(on) at Cold Temperatures

* Low On-Resistance: 8 (Typical) @ 25°C

* Low VGS(off) Voltage: -2.0V to -3.6V

* High Input Impedance

* Low Input and Output Leakage

* Small Package

CPC5603 General Description

The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yiel.

CPC5603 Datasheet (108.43 KB)

CPC5603 Datasheet Preview — Preview of CPC5603 PDF

Datasheet Details

Part number:

CPC5603

Manufacturer:

Clare

File Size:

108.43 KB

Description:

N-channel mosfet.
CPC5603 N-Channel Depletion Mode FET Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 415 14 2.5 Units V  W F.

📁 Related Datasheet

CPC5601 Auxiliary Programmable Driver (IXYS)

CPC5601 Auxiliary Programmable Driver (Clare)

CPC5601D Auxiliary Programmable Driver (IXYS)

CPC5601DTR Auxiliary Programmable Driver (IXYS)

CPC5602 N-Channel FET (IXYS)

CPC5602C N Channel FET (Clare Inc.)

CPC5602C N-Channel FET (IXYS)

CPC5602CTR N-Channel FET (IXYS)

CPC5603 N-Channel FET (IXYS)

CPC5603C N-Channel FET (Clare)

TAGS

CPC5603 N-Channel MOSFET Clare

Image Gallery

CPC5603 Features

CPC5603 General Description

Datasheet Details

File Size:

Description:

CPC5603 Distributor