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CJ2101-G - MOSFET

CJ2101-G Description

MOSFET CJ2101-G RoHS Device V(BR)DSS -20V RDS(on)MAX 100mΩ @ -4.5V 140mΩ @ -2.5V 210mΩ @ -1.8V ID -1.4A .

CJ2101-G Features

* - P-Channel MOSFET - Leading trench technology for low RDS(on) extending battery life Mechanical data - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. - Weight: 0.008 grams(approx. ). Comchip SMD Diode Specialist SOT-323 0.053(1.35) 0.045(1.15) 0.043(1.10) 0.0

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Datasheet Details

Part number
CJ2101-G
Manufacturer
Comchip
File Size
93.70 KB
Datasheet
CJ2101-G-Comchip.pdf
Description
MOSFET

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MOSFET Comchip
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