SS8050-G - General Purpose Transistor
General Purpose Transistor SS8050-G (NPN) RoHS Device Diagram: 1 : BASE 2 : EMITTER 3 : COLLECTOR 1 Base Collector 3 2 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Thermal resistance from junction to ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Value 40 25 5 1.5 300 417 150 -55~+150 Unit V V V A mW °C/W °
