1N483B Datasheet - Compensated Deuices Incorporated

1N483B GENERAL PURPOSE SILICON DIODES

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED 1N483B 1N485B 1N486B MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA 0.085/0.125 2.16/3.18 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C mA 50 5.

1N483B Datasheet (68.16 KB)

1N483B Datasheet Preview — Preview of 1N483B PDF

Datasheet Details

Part number:

1N483B

Manufacturer:

Compensated Deuices Incorporated

File Size:

68.16 KB

Description:

General purpose silicon diodes.

📁 Related Datasheet

1N4830 TIGHT TOLERANCE STABISTORS (Digitron Semiconductors)

1N483B GENERAL PURPOSE SILICON DIODES (Microsemi Corporation)

1N483B Small Signal Diode (Fairchild Semiconductor)

1N483B LOW LEAKAGE RECTIFIERS (Digitron Semiconductors)

1N480 GOLD BONDED DIODES (BC)

1N4800 (1N4xxx) VARACTOR DIODE (MSI Electronics)

1N4801 (1N4xxx) VARACTOR DIODE (MSI Electronics)

1N4802 (1N4xxx) VARACTOR DIODE (MSI Electronics)

1N4803 (1N4xxx) VARACTOR DIODE (MSI Electronics)

1N4804 (1N4xxx) VARACTOR DIODE (MSI Electronics)

TAGS

1N483B GENERAL PURPOSE SILICON DIODES Compensated Deuices Incorporated

Image Gallery

1N483B Distributor