1N483B Datasheet - Microsemi Corporation

1N483B GENERAL PURPOSE SILICON DIODES

AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 GENERAL PURPOSE SILICON DIODES METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.2 mA/°C From 25°C to 150°C 1.0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE 1N483B 1N485B 1N486B VRM V RWM V (pk) 80 180 250 V (pk) 70 180 225 I O I.

1N483B_MicrosemiCorporation.pdf